Superconductivity in silicon

dc.contributor.authorMoun, Monika
dc.contributor.authorSheet, Goutam
dc.date.accessioned2023-08-17T17:39:19Z
dc.date.available2023-08-17T17:39:19Z
dc.date.issued2022
dc.descriptionOnly IISER Mohali authors are available in the record.en_US
dc.description.abstractSilicon, one of the most abundant elements found on Earth, has been an excellent choice of the semiconductor industry for ages. Despite its remarkable applications in modern semiconductor-based electronic devices, the potential of cubic silicon in superconducting electronics remained a challenge because even heavily doped silicon crystals do not superconduct under normal conditions. It is apparent that if superconductivity can be introduced in cubic silicon, that will bring a breakthrough in low-dissipation electronic circuitry. Motivated by this, attempts have been made by several research groups to induce superconductivity in silicon through a number of different routes. Some of the other structural phases of silicon like β-Sn and simple hexagonal are, however, known to display superconductivity. In the present review article, various theoretical and experimental aspects of superconductivity in silicon are discussed. Superconductivity in different phases and different structural forms of silicon are also reviewed. We also highlight the potential of superconducting phases of silicon for technological applications in superconducting nano-electronics.en_US
dc.identifier.citationSuperconductor Science and Technology, 35(8), 7520.en_US
dc.identifier.urihttps://doi.org/10.48550/arXiv.2108.03031
dc.identifier.urihttp://hdl.handle.net/123456789/4810
dc.language.isoen_USen_US
dc.publisherarXiven_US
dc.subjectSuperconductivityen_US
dc.subjectsiliconen_US
dc.titleSuperconductivity in siliconen_US
dc.typeArticleen_US

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