Low power-focused laser irradiation induced controlled nanostructuring of MoS 2 flakes for potential optical and electronic applications
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IISERM
Abstract
Over the past decades, micro/nanostructures have engrossed a tremendous interest
owing to its exceptional features and functional capabilities for extensive development
possibilities in the field of nanotechnology. In recent years, the emergence of 2D
layered materials has attracted immense research and industrial interest due to their
promising layered dependent optical and electronic properties, which opens an
unprecedented prospect of next-generation miniaturized and atomic-scale thin
nanoelectronic, spintronics, memory devices, bio and chemical sensors platform, etc.
Nanostructures of 2D layered materials exhibit an immense scientific value
perspective of extending and improving the next generation miniaturized
multifunctional devices based on 2D-layered materials. Molybdenum Disulfide
(MoS 2 ) is emerging as a most promising candidate in all 2D layered materials and can
be a potential candidate for exploring its nanostructures owing its exotic physical
properties such as layered dependent band transition from indirect to direct, valley
hall effect, excitonic properties, strong spin-orbit coupling, valley-selective circular
dichroism, and stacking sequence-dependent properties. Nanostructuring on MoS 2,
i.e., nanoribbons, nanomesh, etc., may open a new prospect of applications in the field
of optoelectronic devices, sensing and catalysis due to their unexplored promising
optical and electronic properties over the regular 2D configuration. The creation of
these complicated nanostructures can be achieved by using standard nanopatterning
techniques such as lithography, printing, etc. However, these conventional techniques
involve affluent multistep processes to optimize scalability, form factors, and
accuracy in the feature size, which hampers the controlled and rapid prototyping of
preferred nanostructures and poses challenges in this perspective.
In this thesis, we have addressed this key issue, notably the controlled
micro/nanostructuring of MoS 2, using a reliable and simple approach to investigate
the induced functionalities and exploring its potential applications. However, the
identification of layer numbers with accurate thickness is a key prerequisite before
carrying out the micro/nanostructuring of MoS 2 . Firstly, we have presented a
comprehensive and precise technique for thickness (layer number) determination of
2D flakes by spectroscopic mapping of white light reflection from the flake instead of
following the conventional crude way of optical image analysis through RGB filters.This process provides information about the spectral dependency of the optical
contrast in the full visible range. It defines the spectral range of filters to be selected
for optimized contrast imaging and provides an optical mean for accurate thickness
measurements.
Further, we have discussed the crucial role of selectivity of effective electric field
direction for tailoring the optical and electronic properties of 2D MoS 2 flake on
account of its effectiveness to perturb the low dimension lattice structure. The
direction-dependent electric field-induced modulation in the phonon characteristics
and electronic band structure of MoS 2 has been systematically investigated based on
field responsive Raman and photoluminescence measurements. The atomistic insights
obtained from DFT calculations have been correlated with the experimental
observations to elucidate the underlying mechanism. The applied transverse electric
field is found to be significantly more efficacious than the electric field applied
vertically in altering the phonon signatures and bandgap in MoS 2 , where the
electrostrictive response is found to arise from the field-induced alteration in metal-
chalcogen interatomic bonds.
We have demonstrated a simple one-step approach to create nanostructures (such as
nanoribbons and nanomesh) on MoS 2 flake of desired geometries and location by
using 532 nm low power-focused laser of a Raman Confocal Microscope. We have
discussed the controlling parameters for precise nanostructuring along with a detailed
description of the void shape and its correlation with the crystal orientation of the
plane of flake. The minimum feature size of the nonpatterns achieved in this technique
is ̴ 300 nm, which is close to the diffraction limit of the laser used (532 nm). Using
AFM, Raman spectroscopy and DFT modeling, an in-depth investigation has been
carried out to understand the nature and mechanism of the void formation. The study
shows that void always takes hexagonal or triangular shape, and the periphery of
hexagonal void lies on S atoms, whereas, for the triangular void, it lies on Mo atoms
of the MoS 2 crystal. This approach is more advantageous than prior reported
techniques in terms of its single one-step process, easy to use, no cleanroom facilities
requirement, accuracy, and controllability over designing.
We have demonstrated the unperturbed capacitive behavior of MoS 2 nanostructure
using Electrostatic force microscope (EFM). The comprehensive study on MoS 2nanostructures at varying tip bias voltage and lift height depicts the prominent change
in phase shift at the patterned area rather than the contrast flip in-phase image of the
patterned nanostructure due to the absence of free surface charges. Such phase
changes at patterned nanostructure signify the capacitive interaction between tip and
nanostructures at varying tip bias voltage and lift height, irrespective of their shape
and size. Such capacitive response of MoS 2 nanostructures offers periodic modulation
of capacitance on 2D MoS 2 flake for potential application in capacitive devices.
We have explored various applications of MoS 2 nanostructure, fabricated by simple
low power-focused laser irradiation techniques. Optimized geometry of these
nanostructures, along with selective deposition of gold nanoparticles (AuNP),
demonstrates ultrasensitive Surface-Enhanced Raman Scattering (SERS) with
localized hotspots. Detailed Raman analysis shows that AuNP decorated MoS 2
nanostructure creates hotspots at the edges of the nanostructure, where enhanced
Raman signal of Rhodamine B is detected. Density functional theory (DFT)
calculations have been conducted to comprehend the superior deposition of AuNPs
and the formation of hotspots along the artificial edges. We have demonstrated the
ultrasensitive detection of RhB with SERS enhancement (~10 4 ) at the hotspots for
RhB concentrations as low as ~10 -10 M. The AuNP decorated MoS 2 nanostructure-
based SERS platform opens a new avenue to the controllable hotspots formation of
desired geometry and location with high detection capability.
The formation of the artificial edges on MoS 2 flake via low power-focused laser
irradiation facilitates the active catalytic sites along the edges of the nanostructures
for the electrochemical deposition of gold nanoparticles (AuNPs).
We have
demonstrated a comprehensive investigation of catalytic activities favorable for
electrochemical deposition of AuNPs on created artificial edges of MoS 2 and tested
its efficiency for electrochemical reduction of dinitrogen into ammonia under ambient
conditions. The freshly engineered active sites on MoS 2 flake are exposed in gold
chloride solution at different deposition time and potential to optimize the key factors
for the superior deposition of Au. The preferentially deposited AuNPs on MoS 2 is
being used as electrocatalyst for nitrogen fixation, which exhibits a high ammonia
yield of 21.6×10 -8 mol s -1 cm -2 with faradaic efficiency of 4.37% at low over potential
of -0.1 V as compared to prior reports. By this facile and proficient approach, active
catalytic sites can be customized to desired geometry and quantity on MoS 2 flake,which paves a new perspective of engineering catalytic active sites to design potent
electrocatalysts for enhancing the sensitivity in electrocatalytic reaction based on
MoS 2 .
In summary, this thesis demonstrates a simple, rapid, and reliable approach to
fabricate the nanostructures on MoS 2 in a controlled manner of desired shape and size
using a low power-focused laser etching process along with their practical
applications. Our findings offer a comprehensive platform to explore wide range
applications of MoS 2 based nanostructures in the field of surface plasmon resonance
sensing, FET based bio-chemical sensing, opto-electronic, photonics and so on.