Please use this identifier to cite or link to this item: http://hdl.handle.net/123456789/1833
Title: Electronic structure modification of the KTaO3 single-crystal surface by Ar+ bombardment
Authors: Halder, Soumyadip
Sharma, Minaxi
Singh, Inderjit
Venkatesan, A.
Keywords: Oxygen
perovskite oxid
KTaO3
Ar+ irradiation
Issue Date: 2017
Publisher: APS
Citation: Physical Review B, 96 (11)
Abstract: Oxygen vacancies play an important role in controlling the physical properties of a perovskite oxide. We report alterations in the electronic properties of a cubic perovskite oxide, namely, KTaO3, as a function of oxygen vacancies. The conducting surface of the KTaO3 single-crystal substrate has been realized via Ar+ irradiation. The band gap changes as a function of conductivity which is controlled by irradiation time, indicating the formation of defect states. Kelvin probe force microscopy suggests a sharp increase in the work function upon Ar+ irradiation for a short period of time followed by a monotonic decrease, as we increase the irradiation time. Our experimental findings along with theoretical simulations suggest a significant surface dipole contribution and an unusual change in the electronic band line-up of KTaO3 due to oxygen vacancies.
Description: Only IISERM authors are available in the record.
URI: https://journals.aps.org/prb/abstract/10.1103/PhysRevB.96.115423
http://hdl.handle.net/123456789/1833
Appears in Collections:Research Articles

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