Please use this identifier to cite or link to this item: http://hdl.handle.net/123456789/1901
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dc.contributor.authorChander, S.-
dc.date.accessioned2020-11-19T09:17:03Z-
dc.date.available2020-11-19T09:17:03Z-
dc.date.issued2019-
dc.identifier.citationMaterials Letters, 249, pp. 29-32.en_US
dc.identifier.otherhttps://doi.org/10.1016/j.matlet.2019.04.032-
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S0167577X1930583X-
dc.identifier.urihttp://hdl.handle.net/123456789/1901-
dc.descriptionOnly IISERM authors are available in the record.-
dc.description.abstractHighly efficient CdTe absorber-based solar cells often require Cu-doping for lower resistivity and a suitable ohmic contact, but Cu migration degrades the performance and creates instability of device. Therefore to address these problems, there is a need to optimize CdTe single layer itself with another suitable doping element, so in this report, we have optimized the physical properties of Bi-doped CdTe thin films where the films were air annealed at the different temperatures. Structural analysis revealed the polycrystalline nature with (1 1 1) preferred reflection and maximum grain growth for films annealed at 300 °C as well as high optical absorbance and maximum conductivity are also observed for these films. The investigated findings show that films annealed at 300 °C have favorable properties and may be utilized in the fabrication of highly efficient solar cells.en_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.subjectThin CdTe filmsen_US
dc.subjectBi-dopingen_US
dc.subjectAir-annealingen_US
dc.subjectAbsorber-layeren_US
dc.subjectSolar cellen_US
dc.titleBi-incorporated CdTe thin films for solar cells: Air annealing evolution to structural, optical, electrical and surface topographical propertiesen_US
dc.typeArticleen_US
Appears in Collections:Research Articles

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