Please use this identifier to cite or link to this item: http://hdl.handle.net/123456789/4458
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dc.contributor.authorBiswas, Biswas-
dc.contributor.authorKarmakar, Ayan-
dc.date.accessioned2023-08-10T10:14:30Z-
dc.date.available2023-08-10T10:14:30Z-
dc.date.issued2022-
dc.identifier.citationMaterials Today: Proceedings, 71(2), 220-226en_US
dc.identifier.urihttps://doi.org/10.1016/j.matpr.2022.08.507-
dc.identifier.urihttp://hdl.handle.net/123456789/4458-
dc.descriptionOnly IISER Mohali authors are available in the record.en_US
dc.description.abstractThis article outlines the various configurations of co-planar waveguide (CPW) structures widely employed in silicon-RF (Si-RF) technology along with its empirical circuit modeling. Design aspects, realization techniques, mitigation strategies of commonly associated spurious modes, and finally various kinds of discontinuities in the CPW structures for Si-RF technology has been detailed in this work. Empirical modeling along with full-wave analysis of all these circuits has been carried out to decipher the actual device physics. Qualitative as well as quantitative ways have been adopted here for expressing various parasitic.en_US
dc.language.isoen_USen_US
dc.publisherElsevieren_US
dc.subjectCustomaryen_US
dc.subjectconfiguration’sen_US
dc.subjecttargeting monolithicen_US
dc.subjectGHz to THz frequencyen_US
dc.titleCustomary of CPW configuration’s in silicon RF technology targeting monolithic integration for GHz to THz frequency banden_US
dc.typeArticleen_US
Appears in Collections:Research Articles

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